epitaxy相关论文
We report the growth of InSb layers directly on GaAs(001) substrates without any buffer layers by molecular beam epitaxy......
Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: The more closely......
Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to......
Wet-Chemical Synthesis and Applications of Semiconductor Nanomaterial-Based Epitaxial Heterostructur
Semiconductor nanomaterial-based epitaxial heterostructures with precisely controlled compositions and morphologies are ......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
Growth modulation of simultaneous epitaxy of ZnO obliquely aligned nanowire arrays and film on r-pla
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7......
Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wa
A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using......
A full solution method has been developed as a low cost process of YBa2Cu3O7-x (YBCO) coated conductor fabrication.In th......
采用一种简单的热蒸发法制备了高度有序的ZnO-SnO2异质外延枝状纳米结构。制备过程分两步进行：首先，在氧化铝片基底上制备SnO：纳米线；......
用分子动力学方法模拟了三维外延铝薄膜晶体中温度和表面增原子对失配位错形成的影响，采用的原子间相互作用势是嵌入原子法（EAM）多体......
The effect of buried misfit dislocation on the distribution of Ge self-assembled quantum dots (SAQDs) grown on a relaxed......
采用分子束外延技术在GaAs（001）-4×6衬底上外延出Fe／MgO／Fe（001）单晶磁性隧道结．原位表面磁光Kerr效应（SMOKE）测量表明：当外磁场沿[1 10......
介绍了研制适用于大功率PIN二极管的硅外延材料的工艺过程，采用CVD化学气相外延生长技术，对硅源流量与掺杂剂浓度的精确控制，实现了快......
针对国内市场对200mm Si外延产品需求持续增长，其中高阻厚层产品需求量最大的情况，研制开发了200mm高阻厚层Si外延片，解决了规模生产......
研究了重掺B对300mm直拉si衬底中热致微缺陷的影响。通过800℃／4—16h＋1100℃／16h的低．高两步退火处理发现，与普通（CZ）si片相比，重掺B（HBCZ）S......
文章着重介绍了最近研制出的高质量宽带隙立方氮化硼薄膜的三种制备方法和结构特性:(1)用射频溅射法在Si衬底上制备出立方相含量在......
文章首先介绍了发光二极管（LED）的内量子效率、外量子效率的基本概念和提高量子效率的基本方法，接着对LED外延的结构和方法做了简要介......
文章阐述了当CO吸附改变时Pt/Pt(111)同质外延单层岛的形状的微观选择机制,即岛的取向由沉积原子的边-角扩散运动的不对称性惟一决......
采用激光分子束外延方法，以烧结a—Fe2O3为靶材，在MgO（100）基底上制备了Fe3O4薄膜。通过反射高能电子衍射原位观察了薄膜生长前后的表......
Ge1-xSnx是一种新型的Ⅳ族材料，具有广阔的应用前号，但是其生长存在许多困难，尤其是Sn易于分凝。采用离子轰击和快速变温等方法可以有......
Epitaxy is usually used to produce high quality crystals with ato-mic perfection. Up to now, many semiconductor crystals......
本文采用溅射沉积方法在双轴织构的Ni-W5﹪基带上制备了CeO2和Y2O3薄膜.研究表明CeO2薄膜在Ni基带上的外延方式受生长速率、生长温度......
The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to gr......
